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Mitsubishi’s low-noise GaAs HEMT for 12 - 20GHz range
18 March 2010 |
| Mitsubishi has introduced the MGF4921AM, a low noise GaAs HEMT (High Electron Mobility Transistor) that is highly suitable for low noise amplifiers in satellite digital radio receivers. |
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Mitsubishi's low-noise GaAs HEMT for Ka band
11 January 2010 |
| Mitsubishi has introduced a new plastic packaged GaAs HEMT (High Electron Mobility Transistor), which is suitable for low noise amplifiers in the Ka frequency Band. |
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Mitsubishi Electric launches a power amplifier for WiMAX terminal applications
12 March 2009 |
| Mitsubishi has launched a high power amplifier featuring InGaP HBTs (Heterojunction Bipolar Transistors) tailored specifically for WiMAX terminal applications, providing up to 30dBm of output power in the frequency range 2.5GHz to 2.7GHz. |
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Mitsubishi releases a new 50W GaAs FET high power amplifier for WiMAX base stations
27 March 2008 |
| Mitsubishi Electric Corporation has announced the introduction of their new 50W GaAs FET amplifier, the MGFC47B3538B, which offers greater performance with less power consumption in 3.6GHz WiMAX Base Station applications. |
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Mitsubishi introduces 3.5 GHz band 30 W internally matched GaAs FET for WiMAX base station power amplifier
29 August 2007 |
| Mitsubishi's power GaAs FET utiliises a newly developed FET chip and an internal independently matched circuit to achieve lower distortion levels during low-current operation. This device will make WiMax base stations more compact. |
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Mitsubishi GaAs HBT mobile phone power amplifier module for W-CDMA applications
01 August 2007 |
| As demand for smaller and slimmer mobile phones equipped with more functions to accommodate diversified services grows, the mobile phone industry is faced with the challenge of how to downsize mobile phone components. |
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7.2 V operation high-output MOSFETs for commercial radios from Mitsubishi
01 August 2007 |
| Demand is rising for high-frequency power amplifiers for commercial radios that have higher performance (higher output, destruction resistance and efficiency) with a more compact optimal thermal design for better mountability. |
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