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Replacing FRAM with MRAM memory from Everspin Technologies
With the wide range of memory technologies available in the market it is often difficult to identify which memory is best suited to the needs of an application, today there is no 'holy grail'� memory technology which fits the need of every product. In this article we explore Everspin Technologies MRAM memory technology and compare it with competing FRAM memory technology.
FRAM overview
FRAM, FeRAM or Ferroelectric Random Access Memory uses a ferroelectric capacitor architecture that employs ferroelectric materials as storage elements. These materials have an intrinsic electric dipole switched into opposite polarities with an external electric field. Switching the ferroelectric polarization state (writing to the memory) has an effect on the dipoles causing them to relax over time ultimately leading to fatigue and failure.
MRAM overview
MRAM or Magnetoresistive Random Access Memory is inherently non-volatile, has unlimited endurance with no known wear-out mechanism and is not subject to data loss at higher temperature operating conditions. MRAM technology uses a 1 transistor - 1 magnetic tunnel junction (1T-1MTJ) architecture with the magnetic "state" of a ferromagnetic material as the data storage element. Because MRAM uses a magnetic state for storage rather than charge which can "leak away" with time, MRAM offers significantly long Data Retention (+20 years) and unlimited endurance. The magnetic switching method employed by MRAM requires no displacement of atoms or electrons which means there is no wear-out mechanism associated with this technology.
What are the key advantages of MRAM compared with FRAM?
- MRAM has unlimited endurance and infinite Read/Write cycles; FRAM Reads are destructive and eventually lead to wear-out.
- MRAM Read/Write Cycle and Access times are faster, 35ns vs. 60ns access time, 35ns vs. 115ns cycle time.
- MRAM provides data retention for 20 years.
- MRAM is scalable. Toggle MRAM available up to 16Mb. Largest FRAM densities today are 8Mb.
Everspin MRAM is available in Parallel x8, x16, Serial (SPI and Quad SPI) interface configurations, functional equivalents or drop-in replacements are available for most FRAM devices. Parallel interface MRAM's are available in densities from 256kb to 16Mb for 8-bit interface and 1Mb to 16Mb for 16-bit interface. Serial SPI interface MRAMs are available in 128Kb to 4Mb densities. Quad Serial SPI interface devices are available in 1Mb density. Click here to read more about Quad SPI MRAM from Everspin and to request a FREE evaluation kit.
The MRAM memories are available in BGA, TSOP and compact DFN packages, devices can be specified in commercial, industrial and extended temperature ranges. AEC-Q100 Grade 1 and 3 Qualified options are also available.
Click here for more information or buy from Anglia Live.
Anglia are offering customers a FREE sample of Everspin Technologies MRAM memories, fill in the form below to request yours now.
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For a FREE Everspin MRAM Memory sample please fill in the form below
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For more information, or details on the full range of Everspin products available from Anglia, please email info@anglia.com
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This news article was originally published in May 2016.
